WMJ36N65F2 650V N-Channel SJ-MOSFET TO-247 Package
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WMJ36N65F2 High-Performance 650V N-Channel SJ-MOSFET (TO-247)
Enhance the efficiency and reliability of your high-power electronics with the WMJ36N65F2, a second-generation Super-Junction N-Channel MOSFET designed for fast-switching applications. Its swift body diode delivers improved reverse recovery performance, making it ideal for modern SMPS, PFC, inverter, and industrial control designs.
Fast-Switching SJ-MOSFET for Demanding Power Applications
The WMJ36N65F2 features low RDS(on), high avalanche capability, and robust thermal performance within a TO-247 package. This ensures low conduction loss, lower temperature rise, and long-term stability even under heavy load.
WMJ36N65F2 Product Parameters:
| Drain-Source Voltage (VDS) | 650V |
| Max RDS(on) @ VGS=10V | 0.105Ω |
| Continuous Drain Current (ID) | 36A @ 25°C |
| Power Dissipation (PD) | 277W @ 25°C |
| Gate-Source Voltage (VGS) | ±30V |
| Gate Threshold Voltage (VGS(th)) | Typ. 4V |
| Max VDS @ TJ,max | 700V |
| Typical RDS(on) | 0.087Ω |
WMJ36N65F2 Features:
- Second-generation Super-Junction MOSFET
- Fast body diode for high-frequency switching
- High avalanche ruggedness (100% UIS tested)
- Low RDS(on) for reduced conduction losses
- High dv/dt tolerance
- Pb-free plating & Halogen-free
Common Applications:
- Server & Industrial SMPS
- PFC power stages
- Solar inverters & battery chargers
- Motor control & industrial drives
- High-voltage power conversion platforms
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