WMJ36N65F2 650V N-Channel SJ-MOSFET TO-247 Package
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WMJ36N65F2 High-Performance 650V N-Channel SJ-MOSFET (TO-247)
Enhance the efficiency and reliability of your high-power electronics with the WMJ36N65F2, a second-generation Super-Junction N-Channel MOSFET designed for fast-switching applications. Its swift body diode delivers improved reverse recovery performance, making it ideal for modern SMPS, PFC, inverter, and industrial control designs.
Fast-Switching SJ-MOSFET for Demanding Power Applications
The WMJ36N65F2 features low RDS(on), high avalanche capability, and robust thermal performance within a TO-247 package. This ensures low conduction loss, lower temperature rise, and long-term stability even under heavy load.
WMJ36N65F2 Product Parameters:
| Drain-Source Voltage (VDS) | 650V |
| Max RDS(on) @ VGS=10V | 0.105Ω |
| Continuous Drain Current (ID) | 36A @ 25°C |
| Power Dissipation (PD) | 277W @ 25°C |
| Gate-Source Voltage (VGS) | ±30V |
| Gate Threshold Voltage (VGS(th)) | Typ. 4V |
| Max VDS @ TJ,max | 700V |
| Typical RDS(on) | 0.087Ω |
WMJ36N65F2 Features:
- Second-generation Super-Junction MOSFET
- Fast body diode for high-frequency switching
- High avalanche ruggedness (100% UIS tested)
- Low RDS(on) for reduced conduction losses
- High dv/dt tolerance
- Pb-free plating & Halogen-free
Common Applications:
- Server & Industrial SMPS
- PFC power stages
- Solar inverters & battery chargers
- Motor control & industrial drives
- High-voltage power conversion platforms
Shipping & Customs
🇺🇸🇪🇺 USA & European Union (DDP):
Orders are delivered DDP (Delivered Duty Paid). All customs duties, import taxes, and fees are included — no additional charges on delivery.
🌍 Rest of world:
Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.
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