WMJ53N65F2 650V N-channel Diode Junction MOSFET
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WMJ53N65F2 - High-Quality 650V N-Channel Diode Junction MOSFET for Power Electronics
Enhance the performance of your power electronics with the WMJ53N65F2, a high-quality 650V N-channel diode junction MOSFET. This MOSFET delivers fast switching capabilities and reliable performance, making it an excellent choice for demanding power applications. With its TO-247 package, it provides a familiar format that is easy to integrate into existing systems.
Upgrade Your Power Electronics with the WMJ53N65F2 MOSFET
The WMJ53N65F2 boasts impressive specifications, including a VDS (drain-source voltage) of 650V, ensuring robust operation in high-voltage environments. With an RDS(on) (on-resistance) of 0.078Ω @VGS=10V (max.), it minimizes power loss and enhances overall efficiency. The ID (continuous drain current) of 50A @TA=25℃ allows for handling significant power loads, while the PD (power dissipation) of 350W @TA=25℃ ensures efficient heat dissipation.
Fast Switching and Reliable Performance: WMJ53N65F2 650V N-Channel Diode Junction MOSFET
| Feature | Value |
|---|---|
| VDS (V) | 650 |
| RDS(on) (Ω) | 0.078 @VGS=10V (max.) |
| ID (A) | 50 @TA=25℃ |
| PD (W) | 350 @TA=25℃ |
| VGS (V) | 30 |
| VGS(th) (V) | 3 (Typical) |
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