2N7002LT1G 702 60V 115mA SMD MOSFET Whatsminer H3 CB2 V8 Motherboard
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About the Product
Repair your CB2_V8 Controller with the 2N7002LT1G MOSFET Transistor
Introducing the 2N7002LT1G, the ultimate solution for high-performance control boards. This SMD MOSFET field effect transistor is specifically designed to meet the demanding requirements of modern control board applications. With its impressive features and reliable performance, it is the perfect choice for powering up your Whatsminer H3 motherboard.
The 2N7002LT1G is an N-channel FET type MOSFET, leveraging the power of metal oxide technology. It is engineered to deliver exceptional performance and reliability, ensuring optimal functionality for your control board.
The Ultimate Solution for Whatsminer H3 CB2_V8 Control Board
With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 115mA at 25°C (Tc), this MOSFET provides the necessary power for your control board's operation. The maximum Rds On is 7.5Ω at 500mA and 10V, enabling efficient current flow.
The 2N7002LT1G has a maximum gate-source threshold voltage (Vgs(th)) of 2.5V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. It features an input capacitance (Ciss) of 50 pF at 25V, ensuring effective signal processing.
Designed with durability in mind, this MOSFET comes in a compact SOT-23 package, making it easy to integrate into your control board. Furthermore, it is specifically marked with "702" on the silk screen, indicating compatibility with Whatsminer H3 motherboards.
Operating within a wide temperature range of -55°C to 150°C (TJ), the 2N7002LT1G is built to withstand challenging environments and deliver consistent performance.
Upgrade your control board with the innovative 2N7002LT1G MOSFET transistor and experience the benefits of high-performance and reliability. Take advantage of its advanced features to optimize the functionality of your Whatsminer H3 motherboard.
Technical Features Table:
| Feature | Specification |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) | 115mA (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) | 50 pF @ 25 V |
| Power Dissipation (Max) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
Upgrade your control board today with the innovative 2N7002LT1G MOSFET transistor. Contact our sales team to learn more and place your order for optimal performance and reliability.
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