BSC0901NS 30V Power Management MOSFET for Antminer
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Optimize Power Management with BSC0901NS OptiMOS MOSFET
Upgrade your power management system with the Antminer S9 BSC0901NS OptiMOS 30V Power Management MOSFET. Designed for effective power control, these MOSFETs offer ultra-low gate and output charge, as well as the lowest on-state resistance in small packages. With special EMI behavior to reduce interference, these MOSFETs are ideal for a wide range of applications, including Antminer cryptominers hash boards, onboard chargers, computer mainboards, DC-DC conversion, VRD/VRM, motor control, and LED applications.
High-Performance Power MOSFET for Antminer S9 and More
The BSC0901NS OptiMOS MOSFETs are N-channel FETs with a drain-to-source voltage (Vdss) of 30V, making them suitable for various power management requirements. With a continuous drain current (Id) of 28A (Ta) and 100A (Tc), these MOSFETs provide reliable performance under demanding conditions.
BSC0901NS Technical Features:
|
Category |
Discrete Semiconductor Products |
|
Transistors - FETs, MOSFETs - Single |
|
|
Package |
Tape & Reel (TR) |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
30 V |
|
Current - Continuous Drain (Id) @ 25°C |
28A (Ta), 100A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
1.9mOhm @ 30A, 10V |
|
Vgs(th) (Max) @ Id |
2.2V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
44 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
2800 pF @ 15 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
2.5W (Ta), 69W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Package / Case |
8-PowerTDFN |
|
Base Product Number |
BSC0901 |
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