FDV301N N-channel Field Effect Transistor Whatsminer H3 CPU Control Board
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About the Product
Enhance Your Whatsminer H3 Control Board with the FDV301N Field Effect Transistor
Upgrade your Whatsminer H3 control board to new heights with the powerful FDV301N Field Effect Transistor. Designed with cutting-edge technology, this high-performance FET is the perfect addition to maximize the efficiency and performance of your control board.
Unlock Optimal Performance with the High-Performance FDV301N FET
The FDV301N FET also offers remarkable ESD ruggedness, protecting your control board from electrostatic discharge. Its durability and reliability make it an ideal choice for demanding applications. Upgrade your Whatsminer H3 control board today and unlock its true potential with the FDV301N Field Effect Transistor.
FDV301N MOSFET Key Features:
| Technical Features | Value |
|---|---|
| Continuous Current | 0.22A |
| Peak Current | 0.5A |
| RDS(ON) at VGS=2.7V | 5Ω |
| RDS(ON) at VGS=4.5V | 4Ω |
| Gate-Source Threshold Voltage (VGS(th)) | < 1.5V |
| ESD Ruggedness | > 6kV (human body models) |
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