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FDV301N N-channel Field Effect Transistor Whatsminer H3 CPU Control Board

$0.06 USD
$0.06 USD
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About the Product

Enhance Your Whatsminer H3 Control Board with the FDV301N Field Effect Transistor


Upgrade your Whatsminer H3 control board to new heights with the powerful FDV301N Field Effect Transistor. Designed with cutting-edge technology, this high-performance FET is the perfect addition to maximize the efficiency and performance of your control board.

 

Key Features:

Technical Features Value
Continuous Current 0.22A
Peak Current 0.5A
RDS(ON) at VGS=2.7V
RDS(ON) at VGS=4.5V
Gate-Source Threshold Voltage (VGS(th)) < 1.5V
ESD Ruggedness > 6kV (human body models)

 

With its high current capacity and low-level gate drive requirements, the FDV301N FET ensures optimal performance in your Whatsminer H3 control board. No more hassle with additional bias resistors or multiple digital transistors. This advanced field effect transistor simplifies your setup while delivering exceptional results.

Unlock Optimal Performance with the High-Performance FDV301N FET

The FDV301N FET also offers remarkable ESD ruggedness, protecting your control board from electrostatic discharge. Its durability and reliability make it an ideal choice for demanding applications.

Upgrade your Whatsminer H3 control board today and unlock its true potential with the FDV301N Field Effect Transistor.

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