The IKW75N60T, also marked K75T60, is a 600V 75A IGBT in TO-247 package widely used in frequency converters, UPS and high-current SMPS — including the half-bridge / PFC stages of mining power supplies. Very low VCE(sat) of 1.5V (typical) and a 175°C maximum junction temperature give it the thermal headroom needed for continuous-duty mining loads.
A 5 µs short-circuit withstand time protects the device against transient faults that would destroy a less robust IGBT. Together these specs make it a reliable workhorse for rebuild lines.
Hard-failure recovery — short-circuit failures during transient events.
UPS / frequency converter repair — general-purpose high-current switching.
Production refurbishment — bulk IGBT stock for PSU rebuild lines.
IKW75N60T Specifications
Parameter
Value
Part Number
IKW75N60T (K75T60)
Type
IGBT (Insulated-Gate Bipolar Transistor)
Package
TO-247
Collector-Emitter Voltage
600V
Collector Current
75A
VCE(sat)
1.5V typical
Max Junction Temperature
175°C
Short-Circuit Withstand
5 µs
Condition
Brand New
FAQ — IKW75N60T K75T60 IGBT
Q: IGBT vs MOSFET — which for PSU repair? A: IGBTs dominate at higher voltage / higher current with moderate switching frequency. MOSFETs win at high frequency. Match the original part — don't substitute IGBT for MOSFET (or vice versa) without redesigning the gate drive.
Q: Gate-drive requirements? A: TO-247 IGBTs typically need 12-15V gate drive with low-impedance drivers. Check the original gate-drive stage before installing the new device.
PSU rebuild shops stocking IKW75N60T? Email contact@lys-sz.com for bulk pricing. Worldwide shipping from our Shenzhen warehouses.
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🌍 Rest of world: Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes.
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