High Reliability MOSFET for a Wide Range of Applications: IPW60R060P7 N-Channel 600V 48A TO247-3

Experience high reliability with the IPW60R060P7, a N-channel MOSFET designed for a wide range of applications. Part of the CoolMOS™ P7 series from Infineon Technologies, this MOSFET features a drain to source voltage of 600V and a continuous drain current of 48A at 25°C. The gate drive voltage is 10V for maximum Rds On, and the maximum Rds On is 60mOhm at 15.9A and 10V. With a Vgs(th) of 4V at 800µA, this MOSFET delivers reliable performance.

Reliable Performance with Maximum Rds On and Low Input Capacitance: IPW60R060P7 MOSFET fromInfineon Technologies CoolMOS™ P7 Series

The gate charge (Qg) is 67 nC at 10V, and the input capacitance (Ciss) is 2895 pF at 400V. The IPW60R060P7 has a maximum power dissipation of 164W at Tc, and it operates at temperatures ranging from -55°C to 150°C. It comes in a TO-247-3 package and is designed for through-hole mounting.

Product Features:

• Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs
• Series: CoolMOS™ P7
• Package: Tube FET
• Type: N-Channel-
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 48A
• (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V
• Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
• Vgs(th) (Max) @ Id: 4V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10V
• Vgs (Max): ±20V
• Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400V
• Power Dissipation (Max): 164W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Base Product Number: IPW60R060