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IPW60R070C6 60R070C6 600V 53A N-Channel SJ MOSFET TO247 Package

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About the Product

High-Efficiency IPW60R070C6 600V 53A N-Channel SJ MOSFET


Introducing the IPW60R070C6 600V 53A N-Channel SJ MOSFET, a product that combines the experience and innovation of a leading supplier in the field. This MOSFET offers excellent performance while maintaining ease of use. Its advanced design ensures extremely low switching and conduction losses, resulting in more efficient, compact, lighter, and cooler switching applications.

Very Low Losses | High Commutation Durability | Ease of Use | Lead-Free & Halogen-Free

With its very low Figure of Merit (FOM) Rdson*Qg and Eoss, this MOSFET minimizes losses and maximizes efficiency. It also provides high commutation durability, ensuring reliable performance in demanding applications. The IPW60R070C6 is designed for ease of use and drive, making it accessible for various circuit designs.

This MOSFET is not only performance-oriented but also environmentally friendly. It features lead-free plating and is halogen-free, contributing to a greener and more sustainable approach to electronics.

Technical Features:

Technical Feature Specification
Maximum Power Dissipation (Pd) 391 W
Maximum Drain-Source Voltage 600 V
Maximum Gate-Source Voltage 20 V
Maximum Gate-Threshold Voltage 3.5 V
Maximum Drain Current (Id) 53 A
Maximum Junction Temperature 150 °C
Total Gate Charge (Qg) 170 nC
Rise Time (tr) 12 nS
Drain-Source Capacitance (Cd) 215 pF
Maximum Drain-Source On-State Resistance (Rds) 0.07 Ohm
Package TO247
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