IRS2109 High-Speed Power MOSFET and IGBT Driver
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About the Product
Powering Efficiency and Precision - IRS2109 High-Speed Driver
Experience unparalleled performance with the IRS2109 High-Speed Power MOSFET and IGBT Driver. This advanced driver is designed to deliver high-voltage capabilities and lightning-fast speed, making it ideal for demanding applications. Built with proprietary HVIC and latch-immune CMOS technology, it ensures rugged and reliable monolithic construction. The output drivers are equipped with high pulse current buffer stages, minimizing driver cross-conduction for optimal efficiency.
Boost Performance with the IRS2109 High-Voltage MOSFET and IGBT Driver
The floating channel allows for seamless driving of N-channel power MOSFETs or IGBTs in high-side configurations, accommodating operating voltages of up to 600V. With features like undervoltage lockout, cross-conduction prevention logic, matched propagation delays, and a lower di/dt gate driver for noise immunity, the IRS2109 sets the standard for precision and performance. Compatible with 3.3V, 5V, and 15V input logic, this driver offers versatility and seamless integration into various systems.
IRS2109 MOSFET Technical Features:
| Feature | Description |
|---|---|
| Floating channel designed for bootstrap operation | Seamless driving of MOSFETs/IGBTs |
| Fully operational at +600V | Unmatched high-voltage performance |
| Withstands negative transient voltages, dv/dt immunity | Reliable operation in challenging environments |
| Gate drive supply range 10V to 20V | Flexible voltage options |
| Undervoltage lockout on both channels | Ensures safe and efficient operation |
| 3.3V, 5V, and 15V input logic compatible | Versatile compatibility with different systems |
| Cross-conduction prevention logic | Optimal driver performance and efficiency |
| Matched propagation delays of both channels | Synchronized operation for precision |
| High-side output is in phase with IN input | Precise control and performance |
| Logic and power grounds +/- 5V offset | Enhanced stability and reliability |
| Lower di/dt gate driver for better noise immunity | Improved performance in noisy environments |
| Close input turns off both channels | Efficient control and power management |
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