The LSB65R041GF is an N-channel SuperJunction MOSFET rated at 650V / 78A in a TO-247 package, delivering 41mΩ Rds(on) and 500W power dissipation. With a total gate charge of 110nC and a gate threshold of 4V, it provides high-efficiency primary-side switching for high-wattage mining power supplies. The SuperJunction architecture achieves significantly lower conduction losses than conventional planar MOSFETs at equivalent voltage ratings. New original component.
SuperJunction Advantage in Mining PSUs
Mining PSUs run their primary-side MOSFETs at sustained high power for months without interruption. The LSB65R041GF's 41mΩ on-resistance minimises conduction loss and heat generation in the half-bridge or full-bridge circuit, directly extending PSU service life. The low gate charge reduces driver losses at high switching frequencies, improving overall conversion efficiency and keeping component temperatures within safe margins.
Replacement Procedure
Disconnect mains and discharge bulk capacitors — primary-side bus exceeds 400V DC. Locate the failed MOSFET on the primary board near the transformer heatsink. Inspect both devices in the half-bridge pair. Remove mounting hardware, desolder leads, clean pads. Install the new LSB65R041GF with correct pin orientation, apply thermal compound and torque the mounting screw. Power through a variac under progressive load and verify clean output. Replace both half-bridge MOSFETs as a pair if either is suspect.
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