NSI8121N1 SOIC-8 High-Reliability Dual-Channel Digital Isolator
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High-Performance Dual-Channel Digital Isolator - NSI8121N1 SOIC-8
Upgrade your industrial automation systems and ensure reliable signal isolation with the NSI8121N1 SOIC-8 High-Reliability Dual-Channel Digital Isolator. This versatile device offers multiple insulation withstand voltage options (3.75kVrms, 5kVrms), high electromagnetic immunity, and low emissions, all while consuming low power.
Multiple Insulation Voltage Options with High CMTI and Low Power Consumption
With a data rate of up to 150Mbps, the NSI8121N1 enables fast and accurate signal transmission across isolated channels. Its high common-mode transient immunity (CMTI) of up to 150kV/us ensures robust performance in demanding industrial environments.
The NSI8121N1 features a chip-level ESD protection of HBM: ±6kV, safeguarding the device against electrostatic discharge. It offers configuration options for default output levels, providing flexibility in various application scenarios. The device also has a long isolation barrier life of over 60 years, ensuring prolonged operational reliability.
NSI8121N1 SOIC-8 Technical Features:
| Feature | Details |
|---|---|
| Insulation Voltage | Up to 5000VRMS |
| Data Rate | DC to 150Mbps |
| Power Supply Voltage | 2.5V to 5.5V |
| AEC-Q100 Grade 1 Availability | Yes (SOIC-8 package) |
| CMTI | 150kV/us |
| Chip Level ESD | HBM: ±6kV |
| Default Output Level Options | High-level or low-level |
| Isolation Barrier Life | >60 years |
| Power Consumption | 1.5mA/ch (1 Mbps) |
| Propagation Delay | <10ns |
| Operating Temperature | -40℃ to 125℃ |
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