NSi6602B Isolated Dual-Channel Gate Driver IC

NSi6602B Isolated Dual-Channel Gate Driver IC – Mining PSU MOSFET Driver

The NSi6602B is a high-speed isolated dual-channel gate driver designed to drive power MOSFETs and IGBTs at switching frequencies up to 2MHz. Each output sources 4A and sinks 6A peak with 25ns propagation delay and 5ns maximum delay matching. It features ±150kV/µs common-mode transient immunity, UVLO on all supply pins, programmable deadtime and operates from -40°C to 125°C. Input supply 2.7–5.5V, driver supply up to 25V.

Difference from NSI6602BD

The NSi6602B shares the same pinout and core performance as the NSI6602BD but targets slightly different reliability grades and sourcing channels. Both deliver identical electrical performance — 4A/6A drive, 25ns delay, 5ns matching — and are interchangeable in mining PSU applications. If one is out of stock, the other is a direct drop-in substitute.

Replacement Procedure

Disconnect mains and discharge all capacitors. Locate the gate driver IC on the primary control board adjacent to the MOSFET gate drive circuit. Desolder, clean pads, install the new NSi6602B with pin 1 aligned and reflow. If the driver failure caused MOSFET damage, replace the power MOSFETs as well. Test through a variac under progressive load.

NSi6602B Gate Driver Specifications

Related Gate Driver ICs for PSU Repair

• IX4424N Gate Driver – Bitmain PSU MOSFET Repair
• MD18623 High-Frequency Dual Gate Driver
• NSI6602BD Isolated Gate Driver (D variant)
• SLM346 Isolated Gate Driver – Whatsminer P221 / P222

Repairing mining PSU driver stages? Contact us at contact@lys-sz.com for gate driver ICs and matched MOSFETs.

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