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Qorvo UJ3C120150K3S N-Channel MOSFET 1200V 18.4A 166.7W TO-247-3 for Bitmain APW11 Power Supply

$9.60 USD
$9.60 USD
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About the Product

Qorvo UJ3C120150K3S N-Channel MOSFET


Enhance your power electronics applications with the Qorvo UJ3C120150K3S N-Channel MOSFET. This discrete semiconductor component is designed for high-voltage and high-power applications. With a drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 18.4A (Tc) at 25°C, this MOSFET delivers reliable and efficient performance.

High-Voltage and High-Power Qorvo UJ3C120150K3S N-Channel MOSFET for APW11 Power Applications

The UJ3C120150K3S features SiCFET (Cascode SiCJFET) technology, offering enhanced power handling capabilities. Its low on-resistance (Rds On) of 180mOhm @ 5A, 12V ensures minimal power loss. The MOSFET has a maximum gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 5.5V @ 10mA.

With a maximum power dissipation of 166.7W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the UJ3C120150K3S is suitable for demanding environments. It is available in a TO-247-3 package, allowing for easy through-hole mounting.

 

Technical Features:

Feature Description
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 12V
Vgs(th) (Max) @ Id 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 15V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 738pF @ 100V
Power Dissipation (Max) 166.7W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Base Product Number UJ3C120150


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