UJ3C120150K3S 1200V N-Channel MOSFET for Bitmain APW11 PSU
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Qorvo UJ3C120150K3S 1200V N-Channel Power MOSFET
The Qorvo UJ3C120150K3S is a high-voltage N-Channel power MOSFET designed for demanding power conversion and power supply applications. Utilizing advanced SiCFET (Cascode SiCJFET) technology, this device delivers high efficiency, low conduction losses, and excellent thermal stability, making it a reliable replacement component for the Bitmain Antminer APW11 power supply.
High-Voltage SiCFET MOSFET for Bitmain APW11 Power Supply Repair
With a 1200V drain-to-source voltage rating and a continuous drain current of 18.4A, the UJ3C120150K3S is engineered for high-power switching environments. Its low RDS(on) of 180mΩ and fast switching behavior help reduce power loss and improve overall PSU efficiency. The robust TO-247-3 package ensures effective heat dissipation and long-term operational reliability.
Technical Specifications
| Parameter | Specification |
|---|---|
| MOSFET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain-Source Voltage (VDSS) | 1200V |
| Continuous Drain Current (ID) | 18.4A @ Tc=25°C |
| RDS(on) | 180mΩ @ 5A, VGS=12V |
| Gate Threshold Voltage (VGS(th)) | 5.5V @ 10mA |
| Gate-Source Voltage (Max) | ±25V |
| Total Gate Charge (Qg) | 30nC @ 15V |
| Input Capacitance (Ciss) | 738pF @ 100V |
| Power Dissipation | 166.7W (Tc) |
| Operating Temperature | -55°C to +175°C |
| Package | TO-247-3 (Through-Hole) |
Key Features
- Advanced SiC cascode technology for high-efficiency switching
- 1200V high-voltage capability
- Low RDS(on) for reduced conduction losses
- Low gate charge for fast switching performance
- Excellent thermal stability and avalanche ruggedness
- Ideal for high-power PSU repair and replacement
Typical Applications
- Bitmain Antminer APW11 power supply repair
- High-voltage switching power supplies
- Industrial power converters
- High-efficiency PFC and inverter circuits
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