SI7942DP-T1-GE3 RF Transistor - Dual N-Channel MOSFET
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SI7942DP-T1-GE3 Dual N-Channel MOSFET | 100V 3.8A for RF & High-Frequency Switching
The SI7942DP-T1-GE3 is an original dual N-channel MOSFET designed for RF amplifier circuits, high-speed switching, and power-management designs. The compact surface-mount SO8 package integrates two channels rated at 100V Vdss / 3.8A continuous current (5.9A pulsed), with 49mΩ RDS(on) at Vgs=10V for low conduction losses. A logic-level gate threshold (Vgs(th) 2-4V) makes it compatible with low-voltage control circuits.
This part is the workhorse choice when a design needs two clean, well-matched N-channel switches in a single footprint — synchronous half-bridges, push-pull stages, motor drivers, and RF power-management blocks. Operating from -55°C to +150°C, it is suitable for industrial, automotive-adjacent, and consumer-electronics duty.
High-Speed SI7942DP-T1-GE3 MOSFET — Low RDS(on) & Logic-Level Gate
- High-frequency performance — optimised for RF circuits and switching applications up to 100V/3.8A.
- Low power loss — 49mΩ RDS(on) reduces heat generation and improves energy efficiency.
- Logic-level gate — compatible with low-voltage control circuits (Vgs(th) 2V-4V).
- Robust design — operates from -55°C to +150°C for reliability across environments.
- Surface-mount SO8 package — easy automated PCB assembly in compact layouts.
Typical Use Cases for the SI7942DP
The dual-channel SO8 form factor is a common choice for synchronous DC-DC converters and half-bridge drivers, where matched MOSFETs in a tight thermal footprint produce clean switching waveforms at high frequencies. The SI7942DP also fits cleanly into RF power-management blocks and audio-class amplifier output stages where low Qg (24nC) keeps drive losses manageable. Its 1.4W power dissipation envelope sets the operating ceiling on continuous-duty designs.
SI7942DP-T1-GE3 MOSFET Specifications
| Feature | Specification |
|---|---|
| Model | SI7942DP-T1-GE3 |
| Type | Dual N-Channel MOSFET |
| Voltage (Vdss) | 100V |
| Current (Id) | 3.8A (5.9A pulsed) |
| RDS(on) | 49mΩ @ 10V |
| Gate Charge (Qg) | 24nC |
| Gate Threshold (Vgs(th)) | 2V-4V |
| Power Dissipation | 1.4W |
| Mounting Type | Surface Mount (SO8) |
| Operating Temperature | -55°C to +150°C |
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