SI7942DP-T1-GE3 RF Transistor - Dual N-Channel MOSFET 100V 3.8A for High-Frequency Circuits

Premium Dual N-Channel MOSFET for RF & Switching Applications

Upgrade your electronic circuits with the original SI7942DP-T1-GE3 RF Transistor, a high-performance dual N-Channel MOSFET designed for RF applications, amplifier circuits, and high-speed switching. This surface-mount MOSFET delivers exceptional efficiency with its low on-resistance (49mΩ) and fast switching speeds, making it ideal for power-sensitive applications where performance matters.

High-Speed SI7942DP-T1-GE3 MOSFET - Low RDS(on) & Logic-Level Gate

✔ High-Frequency Performance – Optimized for RF circuits and switching applications up to 100V/3.8A
✔ Low Power Loss – 49mΩ RDS(on) reduces heat generation and improves energy efficiency
✔ Logic-Level Gate – Compatible with low-voltage control circuits (Vgs(th) = 2V-4V)
✔ Robust Design – Operates in -55°C to +150°C environments, ensuring reliability
✔ Surface-Mount (SO8 Package) – Easy automated PCB assembly and compact design

Ideal for RF amplifiers, power management circuits, and high-efficiency switching systems, the SI7942DP-T1-GE3 ensures minimal signal loss and maximum performance.

SI7942DP-T1-GE3 MOSFET Specifications Table: