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About the Product
Experience High Power Density and Efficient Power Management with the SRT045N012H Power MOSFET
The SRT045N012H Low-Voltage Power MOSFET in a PDFN5*6 package is a top-of-the-line component designed to meet the demands of applications requiring excellent power density and synchronous rectification. With its low on-resistance, low gate charge, and fast switching times, the SRT045N012H delivers outstanding performance and efficiency.
Featuring an ultra-low RDS(ON)_TYP of 1.07mΩ at VGS = 10V, this MOSFET minimizes power loss and ensures efficient power delivery. Its ultra-low gate charge, with a typical value of 73nC, enables fast and responsive switching, contributing to optimized power management.
Robust Design and Fast Switching for Diverse Applications
The SRT045N012H is built with a robust design, offering enhanced EAS performance and robustness. It exhibits highly robust avalanche characteristics with a breakdown voltage of 45V, ensuring stable operation even under demanding conditions. Additionally, it improves electromagnetic interference (EMI) performance, contributing to cleaner and more reliable operation in sensitive electronic systems.
This low-voltage power MOSFET finds versatile application in various fields, including server/telecom, DC/DC converters, high-power supplies, and battery management systems. Its high performance, fast switching capability, and robust design make it an ideal choice for demanding applications where efficiency and reliability are paramount.
Technical Features:
Feature
Description
Ultra-low RDS(ON)
Ultra-low on-resistance for minimal power loss
Ultra-low Gate Charge
Low gate charge for fast and responsive switching
Fast Switching
Capable of fast switching for optimized power management
Robust Design
Robust design for enhanced EAS performance and robustness
EMI Improvement
Improves electromagnetic interference (EMI) performance for cleaner operation
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