Upgrade Power Efficiency with the SRT045N012HS Low-Voltage Power MOSFET
The SRT045N012HS is a high-performance low-voltage power MOSFET that utilizes advanced split gate trench technology. Designed for applications requiring exceptional power density and synchronous rectification, this MOSFET offers a range of features to enhance performance and efficiency.
Fast Switching and Low On-Resistance for Excellent Power Density
With an ultra-low on-resistance of only 1.07mΩ @VGS = 10V, the SRT045N012HS minimizes power losses and improves overall power efficiency. Its low gate charge of 73nC (typical) enables fast switching times, reducing switching losses and enhancing system responsiveness.
SRT045N012HS MOSFET Features:
Feature
Details
On-Resistance (RDS(ON))
Ultra Low - 1.07mΩ @VGS = 10V
Gate Charge (Qg)
Ultra Low - 73nC (typical)
Switching Capability
Fast switching times
Design
Robust with better EAS performance
EMI Improvement
Enhanced EMI characteristics
Package
TO-263-2
Qualified
Non-automotive qualified
FAQ — SRT045N012HS MOSFET
Q: Substitute MOSFETs? A: Any 12V N-channel with matching Rds(on), Qg, and footprint works. Match thermal package to original.
Q: Used in which boards? A: Used on various modern hashboard buck stages — confirm against your board's part number before ordering.
Hashboard repair shops stocking SRT045N012HS MOSFETs? Email contact@lys-sz.com for bulk pricing. Worldwide shipping from our Shenzhen warehouses.
📦 Shipping & Customs⌄
🇺🇸🇪🇺 USA & European Union (DDP): Orders are delivered DDP. All customs duties, import taxes, and fees are included — no additional charges on delivery.
🌍 Rest of world: Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes.
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