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  • SRT045N012HS Low-Voltage Power MOSFET - Advanced Technology for High Power Density Applications
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SRT045N012HS Low-Voltage Power MOSFET - Advanced Technology for High Power Density Applications

$0.60 USD
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About the Product

Upgrade Power Efficiency with the SRT045N012HS Low-Voltage Power MOSFET

The SRT045N012HS is a high-performance low-voltage power MOSFET that utilizes advanced split gate trench technology. Designed for applications requiring exceptional power density and synchronous rectification, this MOSFET offers a range of features to enhance performance and efficiency.

Fast Switching and Low On-Resistance for Excellent Power Density

With an ultra-low on-resistance of only 1.07mΩ @VGS = 10V, the SRT045N012HS minimizes power losses and improves overall power efficiency. Its low gate charge of 73nC (typical) enables fast switching times, reducing switching losses and enhancing system responsiveness.

 

SRT045N012HS MOSFET Features:

Feature Details
On-Resistance (RDS(ON)) Ultra Low - 1.07mΩ @VGS = 10V
Gate Charge (Qg) Ultra Low - 73nC (typical)
Switching Capability Fast switching times
Design Robust with better EAS performance
EMI Improvement Enhanced EMI characteristics
Package TO-263-2
Qualified Non-automotive qualified
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Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.

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