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SRT045N012HS Low-Voltage Power MOSFET - Advanced Technology for High Power Density Applications

$0.60 USD
$0.60 USD
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About the Product

Upgrade Power Efficiency with the SRT045N012HS Low-Voltage Power MOSFET


The SRT045N012HS is a high-performance low-voltage power MOSFET that utilizes advanced split gate trench technology. Designed for applications requiring exceptional power density and synchronous rectification, this MOSFET offers a range of features to enhance performance and efficiency.

Fast Switching and Low On-Resistance for Excellent Power Density

With an ultra-low on-resistance of only 1.07mΩ @VGS = 10V, the SRT045N012HS minimizes power losses and improves overall power efficiency. Its low gate charge of 73nC (typical) enables fast switching times, reducing switching losses and enhancing system responsiveness.

The robust design of the SRT045N012HS ensures reliable operation and better EAS (Avalanche Energy) performance. It also features improved EMI (Electromagnetic Interference) characteristics, minimizing interference and enhancing system reliability.

This power MOSFET comes in a TO-263-2 package, providing easy installation and compatibility with various applications. Please note that the SRT045N012HS is non-automotive qualified.

 

Technical Features:

Feature Details
On-Resistance (RDS(ON)) Ultra Low - 1.07mΩ @VGS = 10V
Gate Charge (Qg) Ultra Low - 73nC (typical)
Switching Capability Fast switching times
Design Robust with better EAS performance
EMI Improvement Enhanced EMI characteristics
Package TO-263-2
Qualified Non-automotive qualified
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