VS3603GPMT 30V 200A N-Channel Advanced Power MOSFET for Hash Board Replacement

Name: VS3603GPMT 30V 200A N-Channel Advanced Power MOSFET for Hash Board Replacement
Brand: LYS Shenzhen
Price: 0.85 USD
Availability: InStock

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About the Product

Upgrade Your Hash Board with the VS3603GPMT Advanced Power MOSFET

The VS3603GPMT 30V/200A N-Channel Advanced Power MOSFET is the perfect replacement for a failed MOS chip on your hash board. Utilizing the advanced PDFN5*6 packaging technology, this MOSFET delivers exceptional performance and reliability.

High-Efficiency N-Channel MOSFET for Reliable Hash Board Repairs

Featuring enhancement mode and very low on-resistance, the VS3603GPMT MOSFET ensures efficient power management. With VitoMOS® II Technology, it offers fast switching capabilities, optimizing the overall performance of your cryptominer hash board. The MOSFET has undergone a 100% avalanche test, guaranteeing its durability and resilience.

Designed for N-Channel control channel applications, the VS3603GPMT MOSFET provides a maximum power dissipation of 89W, a drain-source voltage of 30V, and a gate-source voltage of 20V. Repair your hashboard with confidence using the VS3603GPMT N-Channel Advanced Power MOSFET.

VS3603GPMT Product Parameters:

Parameter	Value
Type Designator	VS3603GPMT
Marking Code	3603GPMT
Type of Transistor	MOSFET
Type of Control Channel	N-Channel
Maximum Power Dissipation (Pd)	89 W
Maximum Drain-Source Voltage (Vds)	30 V
Maximum Gate-Source Voltage (Vgs)	20 V
Maximum Gate-Threshold Voltage (Vgs(th))	2.2 V
Maximum Drain Current (Id)	200 A
Maximum Junction Temperature (Tj)	150 °C
Total Gate Charge (Qg)	102 nC
Rise Time (tr)	83 nS
Drain-Source Capacitance (Cd)	5170 pF
Maximum Drain-Source On-State Resistance (Rds)	0.0021 Ohm

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