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  • VS3603GPMT N-Channel Advanced Power MOSFET for Hash Board Replacement
  • VS3603GPMT 30V/200A N-Channel Advanced Power MOSFET for Hash Board Replacement
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VS3603GPMT 30V 200A N-Channel Advanced Power MOSFET for Hash Board Replacement

$0.85 USD
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About the Product

Upgrade Your Hash Board with the VS3603GPMT Advanced Power MOSFET

The VS3603GPMT 30V/200A N-Channel Advanced Power MOSFET is the perfect replacement for a failed MOS chip on your hash board. Utilizing the advanced PDFN5*6 packaging technology, this MOSFET delivers exceptional performance and reliability.

High-Efficiency N-Channel MOSFET for Reliable Hash Board Repairs

Featuring enhancement mode and very low on-resistance, the VS3603GPMT MOSFET ensures efficient power management. With VitoMOS® II Technology, it offers fast switching capabilities, optimizing the overall performance of your cryptominer hash board. The MOSFET has undergone a 100% avalanche test, guaranteeing its durability and resilience.

 

VS3603GPMT Product Parameters:

Parameter Value
Type Designator VS3603GPMT
Marking Code 3603GPMT
Type of Transistor MOSFET
Type of Control Channel N-Channel
Maximum Power Dissipation (Pd) 89 W
Maximum Drain-Source Voltage (Vds) 30 V
Maximum Gate-Source Voltage (Vgs) 20 V
Maximum Gate-Threshold Voltage (Vgs(th)) 2.2 V
Maximum Drain Current (Id) 200 A
Maximum Junction Temperature (Tj) 150 °C
Total Gate Charge (Qg) 102 nC
Rise Time (tr) 83 nS
Drain-Source Capacitance (Cd) 5170 pF
Maximum Drain-Source On-State Resistance (Rds) 0.0021 Ohm

International Customers Please Note:

This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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