SRT045N012HS Low-Voltage Power MOSFET - Advanced Technology for High Power Density Applications
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Upgrade Power Efficiency with the SRT045N012HS Low-Voltage Power MOSFET
The SRT045N012HS is a high-performance low-voltage power MOSFET that utilizes advanced split gate trench technology. Designed for applications requiring exceptional power density and synchronous rectification, this MOSFET offers a range of features to enhance performance and efficiency.
Fast Switching and Low On-Resistance for Excellent Power Density
With an ultra-low on-resistance of only 1.07mΩ @VGS = 10V, the SRT045N012HS minimizes power losses and improves overall power efficiency. Its low gate charge of 73nC (typical) enables fast switching times, reducing switching losses and enhancing system responsiveness.
SRT045N012HS MOSFET Features:
| Feature | Details |
|---|---|
| On-Resistance (RDS(ON)) | Ultra Low - 1.07mΩ @VGS = 10V |
| Gate Charge (Qg) | Ultra Low - 73nC (typical) |
| Switching Capability | Fast switching times |
| Design | Robust with better EAS performance |
| EMI Improvement | Enhanced EMI characteristics |
| Package | TO-263-2 |
| Qualified | Non-automotive qualified |
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