STL7NM60N Power MOSFET - Revolutionary Design for Unmatched Efficiency
Experience unmatched efficiency with the STL7NM60N Power MOSFET, a revolutionary N-channel device designed for high-efficiency converters. Featuring a vertical structure and a striped layout, this MOSFET sets new standards with one of the world's lowest on-resistance and gate charges.
High-Efficiency N-Channel Power MOSFET for Demanding Switching Applications
The STL7NM60N power MOSFET is specifically designed to meet the demands of high-efficiency converters. Its exceptional low on-resistance and gate charges ensure efficient power transfer and minimize power losses, resulting in improved overall system performance.
Exceptional Performance and Reliability for Industrial Equipment, Motor Drives, and Power Supplies
Ideal for demanding switching applications, the STL7NM60N offers versatility in various industries. Whether you require precise power control in industrial equipment, motor drives, or power supplies, this MOSFET delivers reliable and efficient performance.
Repair your power conversion systems with the STL7NM60N Power MOSFET, featuring a revolutionary design that sets new benchmarks in efficiency, performance, and reliability.
STL7NM60N Technical Features:
Technical Features
FET Type
N-channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Continuous Drain Current (Id) @ 25°C
5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Maximum On-Resistance (Rds on) @ Id, Vgs
900mΩ @ 2.5A, 10V
Maximum Gate-Source Threshold Voltage (Vgs(th))
4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs
14nC @ 10V
Maximum Vgs
±25V
Maximum Input Capacitance (Ciss) @ Vds
363pF @ 50V
Maximum Power Dissipation
68W (Tc)
Operating Temperature
-55°C to 150°C (TJ)
International Customers Please Note:
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