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STL7NM60N 600V 5.8A N-Channel Power MOSFET High Efficiency and Performance

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$1.25 USD
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About the Product

STL7NM60N Power MOSFET - Revolutionary Design for Unmatched Efficiency


Experience unmatched efficiency with the STL7NM60N Power MOSFET, a revolutionary N-channel device designed for high-efficiency converters. Featuring a vertical structure and a striped layout, this MOSFET sets new standards with one of the world's lowest on-resistance and gate charges.

High-Efficiency N-Channel Power MOSFET for Demanding Switching Applications

The STL7NM60N power MOSFET is specifically designed to meet the demands of high-efficiency converters. Its exceptional low on-resistance and gate charges ensure efficient power transfer and minimize power losses, resulting in improved overall system performance.

Exceptional Performance and Reliability for Industrial Equipment, Motor Drives, and Power Supplies

Ideal for demanding switching applications, the STL7NM60N offers versatility in various industries. Whether you require precise power control in industrial equipment, motor drives, or power supplies, this MOSFET delivers reliable and efficient performance.

With its low input capacitance, gate charge, and gate input resistance, the STL7NM60N enables precise and responsive switching operations, contributing to enhanced system efficiency. Its 100% avalanche tested design ensures reliable operation even in demanding conditions, offering peace of mind for critical applications.

Repair your power conversion systems with the STL7NM60N Power MOSFET, featuring a revolutionary design that sets new benchmarks in efficiency, performance, and reliability.

 

Technical Features:

Technical Features
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Continuous Drain Current (Id) @ 25°C 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Maximum On-Resistance (Rds on) @ Id, Vgs 900mΩ @ 2.5A, 10V
Maximum Gate-Source Threshold Voltage (Vgs(th)) 4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs 14nC @ 10V
Maximum Vgs ±25V
Maximum Input Capacitance (Ciss) @ Vds 363pF @ 50V
Maximum Power Dissipation 68W (Tc)
Operating Temperature -55°C to 150°C (TJ)
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