VS3603GPMT 30V 200A N-Channel Advanced Power MOSFET
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VS3603GPMT 30V 200A N-Channel Power MOSFET – High-Current Switching for Hashboard Repair
The VS3603GPMT is a 30 V, 200 A N-channel power MOSFET built on VitoMOS II technology and packaged in a compact PDFN5×6 footprint. With an ultra-low Rds(on) of just 2.1 mΩ and 100 % avalanche testing, it is engineered for the demanding voltage-regulation stages on cryptocurrency mining hashboards where high current density and fast switching are essential. This component is a direct drop-in replacement for failed MOS chips in the buck converter arrays that power ASIC chains.
Why MOSFETs Fail on Hashboards
The buck converter stages on a typical mining hashboard cycle at several hundred kilohertz under sustained high current. Over time, thermal fatigue, voltage spikes during load transients, or marginal gate drive can degrade the MOSFET die, eventually leading to increased Rds(on), gate-oxide breakdown, or a hard short. A shorted MOSFET typically blows the upstream fuse or triggers the PSU's overcurrent protection, while a degraded one may cause the associated ASIC domain to undervolt and drop chips from the hashing chain.
VS3603GPMT MOSFET Specifications
| Type Designator | VS3603GPMT |
| Marking Code | 3603GPMT |
| Transistor Type | N-Channel MOSFET |
| Maximum Power Dissipation (Pd) | 89 W |
| Maximum Drain-Source Voltage (Vds) | 30 V |
| Maximum Gate-Source Voltage (Vgs) | 20 V |
| Maximum Gate-Threshold Voltage (Vgs(th)) | 2.2 V |
| Maximum Drain Current (Id) | 200 A |
| Maximum Junction Temperature (Tj) | 150 °C |
| Total Gate Charge (Qg) | 102 nC |
| Rise Time (tr) | 83 nS |
| Drain-Source Capacitance (Cd) | 5170 pF |
| Drain-Source On-State Resistance (Rds) | 0.0021 Ω |
| Package | PDFN5×6 |
| Avalanche Tested | 100% |
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Looking for bulk MOSFET quantities for a batch repair operation? Contact us at contact@lys-sz.com — we can source and ship large volumes directly from Shenzhen.
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