C3D10065A 3rd Generation 650V 10A Silicon Carbide Schottky Diode
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Higher Efficiency and Power Density with C3D10065A Silicon Carbide Schottky Diode
Introducing the C3D10065A, a 3rd generation 650V 10A silicon carbide Schottky diode. This advanced diode leverages the performance advantages of silicon carbide (SiC) technology to surpass the efficiency standards set by traditional silicon-based solutions. With its superior characteristics, it enables higher frequencies, increased power density, and lower overall system costs in a wide range of applications.
Reliable and Efficient 650V 10A Schottky Diode for Various Applications
The C3D10065A features a low forward voltage (VF) drop and a positive temperature coefficient, ensuring efficient power transfer and minimizing power losses. Its zero reverse recovery current and forward recovery voltage contribute to enhanced switching performance and reduced switching losses.
Applications:
- Industrial switch mode power supplies
- Uninterruptible and auxiliary power supplies
- Power Factor Correction (PFC) and DC-DC stage boost
- Solar inverters
C3D10065A Technical Features:
| Feature | Details |
|---|---|
| Diode Type | Silicon carbide (SiC) Schottky diode |
| Voltage Rating | 650V |
| Current Rating | 10A |
| Forward Voltage Drop (VF) | Low |
| Temperature Coefficient | Positive |
| Reverse Recovery Current | Zero |
| Forward Recovery Voltage | Zero |
| Switching Behavior | Temperature-independent |
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