C3D10065A 3rd Generation 650V 10A Silicon Carbide Schottky Diode

Higher Efficiency and Power Density with C3D10065A Silicon Carbide Schottky Diode

Introducing the C3D10065A, a 3rd generation 650V 10A silicon carbide Schottky diode. This advanced diode leverages the performance advantages of silicon carbide (SiC) technology to surpass the efficiency standards set by traditional silicon-based solutions. With its superior characteristics, it enables higher frequencies, increased power density, and lower overall system costs in a wide range of applications.

Reliable and Efficient 650V 10A Schottky Diode for Various Applications

The C3D10065A features a low forward voltage (VF) drop and a positive temperature coefficient, ensuring efficient power transfer and minimizing power losses. Its zero reverse recovery current and forward recovery voltage contribute to enhanced switching performance and reduced switching losses.

Applications:

• Industrial switch mode power supplies
• Uninterruptible and auxiliary power supplies
• Power Factor Correction (PFC) and DC-DC stage boost
• Solar inverters

C3D10065A Technical Features: