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  • C3D10065A 3rd Generation 650V 10A Silicon Carbide Schottky Diode
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C3D10065A 3rd Generation 650V 10A Silicon Carbide Schottky Diode

$0.79 USD
$0.79 USD
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About the Product

Higher Efficiency and Power Density with C3D10065A Silicon Carbide Schottky Diode

Introducing the C3D10065A, a 3rd generation 650V 10A silicon carbide Schottky diode. This advanced diode leverages the performance advantages of silicon carbide (SiC) technology to surpass the efficiency standards set by traditional silicon-based solutions. With its superior characteristics, it enables higher frequencies, increased power density, and lower overall system costs in a wide range of applications.

Reliable and Efficient 650V 10A Schottky Diode for Various Applications

The C3D10065A features a low forward voltage (VF) drop and a positive temperature coefficient, ensuring efficient power transfer and minimizing power losses. Its zero reverse recovery current and forward recovery voltage contribute to enhanced switching performance and reduced switching losses.

Applications:

  • Industrial switch mode power supplies
  • Uninterruptible and auxiliary power supplies
  • Power Factor Correction (PFC) and DC-DC stage boost
  • Solar inverters

C3D10065A Technical Features:

Feature Details
Diode Type Silicon carbide (SiC) Schottky diode
Voltage Rating 650V
Current Rating 10A
Forward Voltage Drop (VF) Low
Temperature Coefficient Positive
Reverse Recovery Current Zero
Forward Recovery Voltage Zero
Switching Behavior Temperature-independent

International Customers Please Note:

This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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