CJ3407 High-Performance MOSFET for Load Switch and PWM Applications
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About the Product
Enhance Power Management with the CJ3407 MOSFET
Upgrade your power management capabilities with the CJ3407 MOSFET, a high-performance component designed for efficient load switching and PWM applications. With advanced trench technology, this MOSFET delivers optimized RDS(on) and low gate charge, ensuring reliable and precise control in various circuits.
Optimized RDS(on) and Low Gate Charge for Reliable Load Switching and PWM Control
The CJ3407 is housed in a compact S0T-23 package, making it ideal for space-constrained designs where efficiency and reliability are paramount. Whether you're working on portable devices, battery-powered systems, or other power-sensitive applications, the CJ3407 is the perfect choice.
With a maximum drain-source voltage (VDS) of -30 V and a maximum gate-source voltage (VGS) of ±20 V, the CJ3407 provides versatility to accommodate different voltage requirements. Its maximum continuous leakage current (ID) of -4.1 A guarantees low leakage performance for improved efficiency.
Technical Features:
| Feature | Specification |
|---|---|
| Maximum Drain-Source Voltage (VDS) | -30 V |
| Maximum Gate-Source Voltage (VGS) | ±20 V |
| Maximum Continuous Leakage Current (ID) | -4.1 A |
| Maximum Power Dissipation (PD) | 350 mW |
| Maximum Junction Temperature (TJ) | 150°C |
| Drain-Source On-Resistance | @(VGS=-10V, ID=-4.1A): 60 mΩ |
| @(VGS = -4.5V, ID= -3A): 87 mΩ | |
| Package | S0T-23 |
| Silkscreen Mark | 3407 |
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