HYG009N04LS1C2 40V 200A N-Channel MOSFET

Maximize the efficiency and reliability of your hash board with the HYG009N04LS1C2 40V 200A N-Channel MOSFET. Designed with a PDFN5*6-8L package and featuring silkscreen marking G009N04, this MOSFET is ideal for replacing faulty MOS chips on hash boards, ensuring your mining operations run smoothly.

Optimize Your Hash Board with HYG009N04LS1C2 MOSFET

The HYG009N04LS1C2 offers superior performance with a voltage rating of 40V and a current rating of 200A. Its low RDS(on) values of 0.75mΩ at VGS = 10V and 1.05mΩ at VGS = 4.5V make it highly efficient in switching applications and power management for DC/DC converters. Additionally, it has been 100% avalanche tested, guaranteeing its reliability and ruggedness under demanding conditions.

Key Features of HYG009N04LS1C2 40V 200A N-Channel MOSFET

Whether you need it for switching applications, power management, or battery protection, the HYG009N04LS1C2 MOSFET is a versatile and dependable choice. Upgrade your crypto mining hardware today with this high-quality component to ensure optimal performance and longevity.

Technical Features Table