Upgrade Your Avalon Power Supply with IXFH48N60X3 600V MOSFET
Introducing the IXFH48N60X3 600V Class X3 Super Junction MOSFET, a high-performance component commonly used in Avalon power supplies. This power MOSFET delivers exceptional efficiency and rugged performance, making it an ideal choice for various applications.
Achieve High Efficiency and Reliable Performance with IXFH48N60X3 MOSFET
The IXFH48N60X3 MOSFET features a nominal current rating of 48A and comes in a TO-247 package. Its advanced design significantly reduces channel resistance (RDS(on)) and gate charge (Qg), resulting in improved power efficiency. With the lowest Figure of Merit (FOM) for RDS(on)xQg and RDS(on)xRthJC, this MOSFET enables superior thermal design and enhanced overall efficiency.
One of the key features of the IXFH48N60X3 MOSFET is its low reverse recovery charge (QRM) and short reverse recovery time (trr), thanks to its body diode. This feature ensures efficient and responsive operation.
With a drain-source voltage of 600V and maximum on-resistance of 0.065 Ohm, the IXFH48N60X3 MOSFET offers high power density and low static losses. Its low gate drive power demand simplifies system design and reduces power requirements.
Applications for the IXFH48N60X3 MOSFET include switched mode and resonant mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drivers, and specifically, Avalon power supplies. Its performance is particularly well-suited for high-frequency applications.
Upgrade your power supply and experience high efficiency, ruggedness against overvoltage, and simplified thermal design with the IXFH48N60X3 600V Class X3 Super Junction MOSFET.
Technical Features:
Feature |
Description |
Low RDS(ON) and QG |
Improved power efficiency and reduced losses |
Low Package Inductance |
Enhanced performance and reduced electromagnetic noise |
High Power Density |
Compact design with high power capabilities |
Easy to Install |
Convenient installation process |
Space-Saving |
Efficiently utilizes space in your system |
Low Static Losses |
Minimizes power loss during operation |
Simplified Thermal Design |
Optimizes thermal management for improved efficiency |
High Ruggedness Against OV |
Provides protection against overvoltage conditions |
Low Gate Drive Power Demand |
Reduces power requirements for gate driving |