JCS12N65FT N-Channel Enhancement Mode Field Effect Transistor TO-220MF
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JCS12N65FT N-Channel MOSFET - The Optimal Choice for Efficient Power Switch Management
Introducing the JCS12N65FT N-Channel MOSFET, the perfect solution to enhance the efficiency and performance of your device's power switch management. Manufactured using advanced trench technology, this MOSFET is specifically designed for high-efficiency switch mode power supplies, electronic lamp ballasts based on a half-bridge, LED power supplies, and more.
Advanced Trench Technology for High-Efficiency Power Applications
The JCS12N65FT N-Channel MOSFET is engineered to deliver exceptional performance with its low gate charge, low Crss (typ. 23pF), and fast switching speeds. These features are crucial for minimizing power losses and optimizing power transfer efficiency in various applications. The MOSFET is avalanche tested, ensuring reliable operation even under demanding conditions.
JCS12N65FT Features Table:
| Feature | Specification |
|---|---|
| Product Category | Discrete Semiconductor Products |
| Transistors | FETs - Single |
| Transistor Type | N-Channel |
| Drain-Source Current (ID) @ 25℃ | 12A |
| Drain-Source Current (ID) @ 100℃ | 7.6A |
| Breakdown Voltage (BVdss) | 650V |
| Drain-Source On-Resistance (Rds(on)) | 0.78Ω |
| Gate Charge (Qg-typ) | 39nC |
| Improved dv/dt Capability | Yes |
| Compliance | RoHS |
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