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  • NSi6602B Reliable and High-Speed Isolated Dual-Channel Gate Driver IC
  • NSi6602B SOP16 Isolated Dual-Channel Gate Driver IC
  • Drive Power Transistors with Precision and Robustness using NSi6602B Gate Driver IC
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NSi6602B Reliable and High-Speed Isolated Dual-Channel Gate Driver IC

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About the Product

Drive Power Transistors with Precision and Robustness using NSi6602B Gate Driver IC

Introducing the NSi6602B, a family of high-reliability isolated dual-channel gate driver ICs designed to deliver precise and robust performance in driving power transistors. With a capability to switch up to 2MHz, this gate driver IC offers exceptional speed and reliability in a range of applications.

Fast, Reliable, and Versatile: The NSi6602B Isolated Dual-Channel Gate Driver IC

The NSi6602B features a typical common-mode transient immunity (CMTI) of 150kV/us, providing robustness and protection against transient disturbances. It operates with a maximum supply voltage of 25V, while the input accepts supply voltages from 2.7V to 5.5V. Additionally, all supply voltage pins support undervoltage lockout (UVLO) protection for enhanced safety.

 

NSi6602B Technical Features:

Feature Specification
Isolated dual-channel drivers
Input side supply voltage 2.7V to 5.5V
Driver-side supply voltage Up to 25V with UVLO
4A peak source and 6A peak sink outputs
High CMTI ±150kV/us typical
Propagation delay 25ns typical
Maximum delay matching 5ns
Maximum pulse width distortion 6ns
Programmable dead time
Minimum input pulse width 15ns
Working temperature -40℃ to 125℃

 

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International (outside the US):
Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.

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