Drive Power Transistors with Precision and Robustness using NSi6602B Gate Driver IC

Introducing the NSi6602B, a family of high-reliability isolated dual-channel gate driver ICs designed to deliver precise and robust performance in driving power transistors. With a capability to switch up to 2MHz, this gate driver IC offers exceptional speed and reliability in a range of applications.

Each output channel of the NSi6602B can source 4A and sink 6A peak current, ensuring efficient and reliable power delivery. With a fast 25ns propagation delay and maximum delay matching of 5ns, it enables precise and synchronized switching operations.

Fast, Reliable, and Versatile: The NSi6602B Isolated Dual-Channel Gate Driver IC

The NSi6602B features a typical common-mode transient immunity (CMTI) of 150kV/us, providing robustness and protection against transient disturbances. It operates with a maximum supply voltage of 25V, while the input accepts supply voltages from 2.7V to 5.5V. Additionally, all supply voltage pins support undervoltage lockout (UVLO) protection for enhanced safety.

With programmable dead time and a minimum input pulse width of 15ns, the NSi6602B offers flexibility and customization options to meet specific application requirements. It also operates reliably in a wide temperature range from -40℃ to 125℃, making it suitable for various environments.

Technical Features:

The NSi6602B gate driver IC is suitable for a wide range of applications requiring precise and robust power transistor switching. Some of the key applications include:

• Isolated DC-DC and AC-to-DC power supplies in server, telecom, and industrial systems
• DC-to-AC solar inverters
• Motor drives and EV charging systems
• UPS and battery chargers

With its high-speed, reliability, and versatility, the NSi6602B gate driver IC empowers engineers to achieve efficient and optimized performance in their power management applications.