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  • High-Performance N-Channel Synchronous Rectification MOSFET with 100A Continuous Drain Current
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SIRA00DP-T1-GE3 30V 100A (D-S) N-channel synchronous rectification MOSFET

$1.35 USD
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About the Product

SIRA00DP-T1-GE3 MOSFET – Boost Your DC/DC and ORing Applications

High-Performance N-Channel Synchronous Rectification MOSFET with 100A Continuous Drain Current

Looking for a reliable MOSFET? Look no further than the powerful SIRA00DP-T1-GE3 N-channel synchronous rectification MOSFET. Designed for both DC/DC and ORing applications, this MOSFET boasts a Vds of 30V and continuous drain current of 100 A, making it perfect for high power density DC/DC, VRM, and embedded DC/DC needs. Its resistance between drain and source is only 830 uOhms, meaning you'll experience lightning-fast charging speeds.

 

SIRA00DP-T1-GE3 MOSFET Features:

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220 nC @ 10 V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

11700 pF @ 15 V

Power Dissipation (Max)

6.25W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8

Base Product Number

SIRA00

International Customers Please Note:

This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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