TP65H035G4WS 650V Gallium Nitride (GaN) FET High Performance

TP65H035G4WS 650V GaN FET – High-Performance Switching for Mining PSU Designs

The TP65H035G4WS is a 650V gallium nitride (GaN) FET delivering 35mΩ Rds(on) with very low reverse recovery charge (Qrr) and reduced crossover loss. It merges a low-voltage silicon MOSFET with a high-voltage GaN HEMT for JEDEC-compliant reliability. The GSD pin layout is optimised for high-speed circuit designs, and dynamic Rds(on) is production-tested. Used in next-generation mining PSU topologies including bridgeless totem-pole PFC stages.

Why GaN FETs in Mining PSUs

GaN transistors switch faster and with lower losses than silicon MOSFETs at equivalent voltage ratings. The TP65H035G4WS's near-zero Qrr eliminates the reverse-recovery losses that plague silicon devices in hard-switching and totem-pole PFC applications. This enables higher power density, improved efficiency and reduced cooling requirements — critical for next-gen mining PSUs targeting 96%+ conversion efficiency.

Replacement Procedure

Disconnect mains and discharge all capacitors. Locate the GaN FET in the PFC or primary switching stage. Desolder, clean pads, install the new TP65H035G4WS with correct GSD pin alignment and reflow. GaN devices are ESD-sensitive — handle with proper grounding. Power through a variac under progressive load and verify clean switching waveforms.

TP65H035G4WS GaN FET Specifications

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Upgrading mining PSUs to GaN technology? Contact us at contact@lys-sz.com for GaN FETs and next-gen switching components.

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