The G1N65R035TB-N is a 650V hybrid normally-off Gallium Nitride (GaN) FET built around a cascode topology that combines a high-voltage GaN HEMT with a low-voltage silicon MOSFET. The result is a transistor with the fast switching and low conduction loss of GaN while behaving like a normally-off enhancement-mode device that drops directly into PWM controller designs. It is used on the primary side of high-efficiency ASIC mining PSUs (latest-generation APW17-class units and aftermarket high-power supplies), where switching loss reduction directly buys back wattage that would otherwise be wasted as heat.
Why GaN Matters in a Mining PSU
Conventional silicon super-junction MOSFETs at 650V have a price-performance ceiling — pushing higher switching frequency to shrink magnetics costs efficiency. GaN devices like the G1N65R035TB-N break that compromise: their switching transitions are several times faster, gate-charge is lower, and Rds(on) holds at a useful 35mΩ class. In a 3000-3500W PSU running at 100kHz+, replacing a failed silicon switch with GaN does not change firmware or topology but shifts the loss balance favourably. In a repair context the cascode hybrid is also forgiving — gate drive looks like a regular MOSFET, no special driver needed.
Replacement Procedure
Disconnect the PSU from mains and bleed the primary bulk capacitors (5 minutes minimum, or use a bleed resistor for safety). Identify the failed switch — typically shorted D-S in both directions, often paired with a blown input fuse and a darkened gate-drive resistor. Clear any short on the gate path before fitting the new device. Mount the G1N65R035TB-N in the original footprint, dress the gate trace short and clean (GaN hates parasitic gate inductance), torque the heatsink screw to spec, and bench-test the PSU at low input voltage / current-limited before connecting to a real load.
G1N65R035TB-N Specifications
Parameter
Value
Part Number
G1N65R035TB-N
Type
Hybrid normally-off GaN FET (GaN HEMT + Si MOSFET cascode)
Drain-Source Voltage
650V
Rds(on)
~35mΩ class
Drive
Standard MOSFET-style gate drive (no GaN-specific driver required)
Application
Primary-side switching in high-efficiency mining PSUs
Repair Note
Clear gate-path shorts before fitting; keep gate trace short
Bench Verify
Low-voltage / current-limited start before full mains
Repairing high-efficiency mining PSUs in volume? Contact us at contact@lys-sz.com for tray-quantity GaN pricing. Worldwide shipping from our Shenzhen warehouse.
📦 Shipping & Customs⌄
🇺🇸🇪🇺 USA & European Union (DDP): Orders are delivered DDP. All customs duties, import taxes, and fees are included — no additional charges on delivery.
🌍 Rest of world: Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes.
Get dedicated B2B pricing on this part and across our full catalog —
quote response within 24 hours, payment by T/T USD bank wire,
and DDP delivery available for US & EU customers (and other lanes on request).
Volume tiers
DDP for US & EU
T/T USD wire
24h response