TP65H035G4WS 650V Gallium Nitride (GaN) FET High Performance

TP65H035G4WS 650V GaN FET - State-of-the-Art Design for High Performance

The TP65H035G4WS is a cutting-edge 650V, 35mΩ GaN FET that combines low-voltage silicon MOSFETs with state-of-the-art high-voltage GaN HEMTs to deliver exceptional reliability and performance. Using advanced epitaxy and patented design techniques, this device simplifies manufacturability and increases silicon efficiency by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge.

TP65H035G4WS Key Features, Benefits, and Applications

The TP65H035G4WS is JEDEC-compliant and features dynamic RDS(on)eff production testing, ensuring optimal performance for demanding applications. Its robust design, powered by wide door safety margin and transient overvoltage capability, ensures that it can withstand even the most challenging environments. 

Key Features:

• JEDEC-Compliant GaN Technology
• Dynamic RDS(on)eff Production Test
• Robust Design with Wide Door Safety Margin and Transient Overvoltage Capability
• Enhanced Surge Current Capability
• Very Low QRR
• Reduced Crossover Loss

Benefits:

• Supports AC-DC Bridgeless Totem-Pole PFC Design, Increasing Power Density and Reducing System Size and Weight
• Improves Efficiency of Hard-Switching and Soft-Switching Circuits
• Easy to Drive with Commonly Used Gate Drivers
• GSD Pin Layout Improves High-Speed Designs

Applications:

• Data Communication
• Wide Range of Industries
• Photovoltaic Inverters
• Servo Motor