Siliconix G47N60EF MOSFET N-Channel 600V 47A (Tc) High Power Through Hole TO-247AC
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High-Performance N-Channel MOSFET for Power Applications
Upgrade your power control systems with the Siliconix G47N60EF MOSFET. This high-performance N-Channel MOSFET is designed to meet the demands of industrial applications. With a drain-to-source voltage of 600V and a continuous drain current of 47A (Tc), it provides robust power handling capabilities.
Siliconix G47N60EF - Efficient Power Control
Featuring advanced MOSFET technology, the G47N60EF ensures efficient power control with low on-resistance (Rds On) of 67mOhm @ 24A, 10V. Its gate charge (Qg) of 225nC @ 10V enables fast switching, optimizing system performance. The MOSFET operates within a wide temperature range of -55°C to 150°C (TJ), making it suitable for challenging environments.
G47N60EF MOSFET Technical Features Table:
| Feature | Specification |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4854pF @ 100V |
| Power Dissipation (Max) | 379W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Base Product Number | SIHG47 |
Shipping & Customs
🇺🇸🇪🇺 USA & European Union (DDP):
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🌍 Rest of world:
Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.
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