IPW60R037CSFD 600V High Voltage Power N-Channel MOSFET

Experience unparalleled charging efficiency and reliability

Experience unrivaled efficiency in the off-vehicle EV charging segment with our IPW60R037CSFD 600V high voltage power MOSFETs. Tailor-made and optimized for the job, this MOSFET offers the most reliable and highest efficiency in the target market thanks to its low gate charge (Qg) and superior switching behavior.

Unmatched high voltage power MOSFETs for off-vehicle EV charging

You can count on its integrated fast body diode and incredibly low reverse recovery charge (Qr) to ensure that your resonant topologies remain a dependable and powerful component of your charging solution.

IPW60R037CSFD parameters:

• Type Designator: IPW60R037CSFD
• Marking Code: 60R037CS
• Type of Transistor: MOSFET
• Type of Control Channel: N-Channel
• Maximum Power Dissipation (Pd): 245 W
• Maximum Drain-Source Voltage |Vds|: 600 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
• Maximum Drain Current |Id|: 54 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 136 nC
• Rise Time (tr): 30 nS
• Drain-Source Capacitance (Cd): 104 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm
• Package: TO247

IPW60R037CSFD Features:

• Provides fast body diode
• Industry-leading reverse recovery charge (Qr)
• Excellent FOM Ros(anQ, andRs(on)Eoss
• Cost optimization
• It has excellent hard-commutation durability and reliability in soft-switching applications
• Maximum efficiency with the perfect ease-of-use/performance trade-off
• Offers solutions for higher power density
• Balanced price/performance ratio of EV charging market potential

IPW60R037CSFD Application:

Ideal for soft and hard switching topology optimized phase-shifted full bridge (ZVS), LLC, and PFC applications - EV charging.