Enhance Power Density and Efficiency with SRC60R090B Super Junction Power MOSFET

The SRC60R090B is a high voltage power MOSFET built using advanced super junction technology, offering exceptional performance for power applications. With an ultra-low on-resistance of 90mΩ at VGS = 10V and an ultra-low gate charge of 90.3nC (typical), this MOSFET delivers superior power density and outstanding efficiency.

High-Performance N-Channel MOSFET for Robust Power Applications and Innosilicon G1240 PSU

Featuring a fast-recovery intrinsic body diode and fast switching capability, the SRC60R090B is designed to handle high voltage applications with ease. Its robust design ensures better EAS (Single Pulse Avalanche Energy) performance, making it a reliable choice for demanding power systems.

With a breakdown voltage of 600V and high rugged avalanche characteristics, the SRC60R090B provides excellent durability and reliability.

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