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SRT045N012H Low-Voltage Power MOSFET PDFN5 - High Performance and Robust Design

$0.75 USD
$0.75 USD
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About the Product

Experience High Power Density and Efficient Power Management with the SRT045N012H Power MOSFET

The SRT045N012H Low-Voltage Power MOSFET in a PDFN5*6 package is a top-of-the-line component designed to meet the demands of applications requiring excellent power density and synchronous rectification. With its low on-resistance, low gate charge, and fast switching times, the SRT045N012H delivers outstanding performance and efficiency.

Robust Design and Fast Switching for Diverse Applications

The SRT045N012H is built with a robust design, offering enhanced EAS performance and robustness. It exhibits highly robust avalanche characteristics with a breakdown voltage of 45V, ensuring stable operation even under demanding conditions. Additionally, it improves electromagnetic interference (EMI) performance, contributing to cleaner and more reliable operation in sensitive electronic systems.


SRT045N012H Technical Features:

Feature Description
Ultra-low RDS(ON) Ultra-low on-resistance for minimal power loss
Ultra-low Gate Charge Low gate charge for fast and responsive switching
Fast Switching Capable of fast switching for optimized power management
Robust Design Robust design for enhanced EAS performance and robustness
EMI Improvement Improves electromagnetic interference (EMI) performance for cleaner operation

 

SRT045N012H Applications:
  • Server/Telecom
  • DC/DC converters
  • High-power supplies
  • Battery management systems

International Customers Please Note:

This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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