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WMJ53N65F2 High Quality 650V N-channel Diode Junction MOSFET

$2.20 USD
$2.20 USD
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About the Product

WMJ53N65F2 - High-Quality 650V N-Channel Diode Junction MOSFET for Power Electronics


Enhance the performance of your power electronics with the WMJ53N65F2, a high-quality 650V N-channel diode junction MOSFET. This MOSFET delivers fast switching capabilities and reliable performance, making it an excellent choice for demanding power applications. With its TO-247 package, it provides a familiar format that is easy to integrate into existing systems.

Upgrade Your Power Electronics with the WMJ53N65F2 MOSFET

The WMJ53N65F2 boasts impressive specifications, including a VDS (drain-source voltage) of 650V, ensuring robust operation in high-voltage environments. With an RDS(on) (on-resistance) of 0.078Ω @VGS=10V (max.), it minimizes power loss and enhances overall efficiency. The ID (continuous drain current) of 50A @TA=25℃ allows for handling significant power loads, while the PD (power dissipation) of 350W @TA=25℃ ensures efficient heat dissipation.

Fast Switching and Reliable Performance: WMJ53N65F2 650V N-Channel Diode Junction MOSFET

Featuring a VGS (gate-source voltage) of 30V and a VGS(th) (gate-source threshold voltage) of typically 3V, the WMJ53N65F2 provides precise control over the switching operation. It also undergoes 100% UIS (unclamped inductive switching) testing for guaranteed reliability.

With its Pb-free plating and halogen-free composition, the WMJ53N65F2 promotes environmental sustainability while delivering outstanding performance.

Upgrade your power electronics with confidence using the WMJ53N65F2 MOSFET and experience fast switching, reliable performance, and exceptional quality.

 

Technical Features:

Feature Value
VDS (V) 650
RDS(on) (Ω) 0.078 @VGS=10V (max.)
ID (A) 50 @TA=25℃
PD (W) 350 @TA=25℃
VGS (V) 30
VGS(th) (V) 3 (Typical)
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