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WMJ53N65F2 High Quality 650V N-channel Diode Junction MOSFET

$2.20 USD
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About the Product

WMJ53N65F2 - High-Quality 650V N-Channel Diode Junction MOSFET for Power Electronics

Enhance the performance of your power electronics with the WMJ53N65F2, a high-quality 650V N-channel diode junction MOSFET. This MOSFET delivers fast switching capabilities and reliable performance, making it an excellent choice for demanding power applications. With its TO-247 package, it provides a familiar format that is easy to integrate into existing systems.

Upgrade Your Power Electronics with the WMJ53N65F2 MOSFET

The WMJ53N65F2 boasts impressive specifications, including a VDS (drain-source voltage) of 650V, ensuring robust operation in high-voltage environments. With an RDS(on) (on-resistance) of 0.078Ω @VGS=10V (max.), it minimizes power loss and enhances overall efficiency. The ID (continuous drain current) of 50A @TA=25℃ allows for handling significant power loads, while the PD (power dissipation) of 350W @TA=25℃ ensures efficient heat dissipation.

 

Fast Switching and Reliable Performance: WMJ53N65F2 650V N-Channel Diode Junction MOSFET

Feature Value
VDS (V) 650
RDS(on) (Ω) 0.078 @VGS=10V (max.)
ID (A) 50 @TA=25℃
PD (W) 350 @TA=25℃
VGS (V) 30
VGS(th) (V) 3 (Typical)

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This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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