WSD20L70DN P-Channel MOSFET - Advanced Trench Technology for Efficient Power Conversion

The WSD20L70DN P-Channel MOSFET is a cutting-edge solution designed specifically for synchronous buck converter applications. With its advanced high cell density trench technology, this MOSFET delivers outstanding performance in terms of RDSON (Drain-Source On-State Resistance) and gate charge characteristics, ensuring highly efficient power conversion.

High-Performance P-Channel MOSFET for Synchronous Buck Converters

Featuring an ultra-low gate charge and advanced trench technology, the WSD20L70DN MOSFET minimizes power losses and maximizes power conversion efficiency. It also offers excellent CdV/dt attenuation, providing stable and reliable operation even in demanding environments.

Superior Performance and Reliability for High-Frequency Point-of-Load Synchronization

With a maximum drain current of 70A and a low on-state resistance of 0.0079 Ohm, the WSD20L70DN is perfectly suited for high-power applications. Its robust design allows it to operate within a wide temperature range, with a maximum junction temperature of 150°C, ensuring reliable performance under various conditions.

The WSD20L70DN MOSFET is an ideal choice for high-frequency point-of-load synchronization and step-down converters. Its versatile applications include cryptominers, motherboards, notebooks, ultramobile PCs (UMPCs), graphics cards, networked DC-DC power systems, and load switches.

Enhance your power conversion efficiency with the WSD20L70DN P-Channel MOSFET, equipped with advanced trench technology for superior performance and reliability.

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