WSD20L70DN 20V 70A P-Channel MOSFET High Performance for Synchronous Buck Converters
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About the Product
WSD20L70DN P-Channel MOSFET - Advanced Trench Technology for Efficient Power Conversion
The WSD20L70DN P-Channel MOSFET is a cutting-edge solution designed specifically for synchronous buck converter applications. With its advanced high cell density trench technology, this MOSFET delivers outstanding performance in terms of RDSON (Drain-Source On-State Resistance) and gate charge characteristics, ensuring highly efficient power conversion.
High-Performance P-Channel MOSFET for Synchronous Buck Converters
Featuring an ultra-low gate charge and advanced trench technology, the WSD20L70DN MOSFET minimizes power losses and maximizes power conversion efficiency. It also offers excellent CdV/dt attenuation, providing stable and reliable operation even in demanding environments.
Superior Performance and Reliability for High-Frequency Point-of-Load Synchronization
With a maximum drain current of 70A and a low on-state resistance of 0.0079 Ohm, the WSD20L70DN is perfectly suited for high-power applications. Its robust design allows it to operate within a wide temperature range, with a maximum junction temperature of 150°C, ensuring reliable performance under various conditions.
WSD20L70DN Technical Parameters:
| Technical Features | |
|---|---|
| Type Designator | WSD20L70DN |
| Transistor Type | MOSFET |
| Control Channel | P-Channel |
| Maximum Power Dissipation (Pd) | 83W |
| Maximum Drain-Source Voltage | Vds |
| Maximum Gate-Source Voltage | Vgs |
| Maximum Gate-Threshold Voltage | Vgs(th) |
| Maximum Drain Current | Id |
| Maximum Junction Temperature (Tj) | 150°C |
| Total Gate Charge (Qg) | 70nC |
| Rise Time (tr) | 52nS |
| Drain-Source Capacitance (Cd) | 927pF |
| Maximum Drain-Source On-State Resistance (Rds) | 0.0079 Ohm |
| Package | DFN3X3-8 |
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